| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSHA620. TSHA6200 TSHA620 TSHA6203 TSHA6201 TSHA62 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在？5毫米（翻 13 / 4）包
GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
VISAY[Vishay Siliconix]
|
| OPE5587 |
High Speed GaAlAs Infrared Emitter
|
Unknow
ETC
List of Unclassifed Manufacturers
|
| VSMF2893SLX01 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| TSHG6200 TSHG620007 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHA5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSMF3710-GS08 TSMF3710-GS18 TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG820009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHF5210 TSHF521009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http://
|
| TSFF551009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
